(Hong Kong)
Product Summary
The P11NK40Z is an N-channel 400V - 0.49Ω - 9A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET. The P11NK40Z is obtained through an extreme optimization of ST’s well established strip-based PowerMES layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. The applications of the P11NK40Z include high current, high speed switching, ideal for off-line power supplies, adaptors and pfc and lighting.
Parametrics
P11NK40Z absolute maximum ratings: (1)VDS, Drain-source Voltage (VGS =0): 400 V; (2)VDGR, Drain-gate Voltage (RGS =20kΩ): 400 V; (3)VGS, Gate- source Voltage: ± 30 V; (4)ID, Drain Current (continuous) at TC = 25℃: 9 A; (5)ID, Drain Current (continuous) at TC = 100℃: 5.67 A; (6)IDM (·) Drain Current (pulsed): 36 A; (7)PTOT, Total Dissipation at TC = 25℃: 110 W; (8)Derating Factor: 0.88 W/℃; (9)VESD(G-S), Gate source ESD(HBM-C=100pF, R=1.5KΩ): 3500 V; (10)dv/dt, Peak Diode Recovery voltage slope: 4.5 V/ns; (11)Viso, Insulation Withstand Voltage (DC): 2500 V; (12)Tj, Operating Junction Temperature: -55 to 150℃; (13)Tstg, Storage Temperature: -55 to 150℃.
Features
P11NK40Z features: (1)typical RDS(on) = 0.49 Ω; (2)extremely high dv/dt capability; (3)100% avalanche tested; (4)gate charge minimized; (5)very low intrinsic capacitances; (6)very good manufacturing repeatibility.
Diagrams
