(Hong Kong)
Product Summary
The MG100Q2YS65H is silicon N channel IGBT, which has a wide application as high power and high speed switching. It is featured with high input impedance and enhancement-mode. What is more, the electrodes are isolated from case.
Parametrics
Absolute maximum ratings:(1)Collector-emitter voltage, VCES: 1200V; (2)Gate-emitter voltage, VGES: 20V; (3)Collector current, at DC condition, IC: 100A; (4)Collector current, at 1ms condition, ICP: 200A; (5)Forward current, DC, IF: 100A; (6)Forward current, 1 ms, IFM: 200A; (7)Collector power dissipation(Tc=25℃), PC: 690W; (8)Junction temperature, Tj: 150℃; (9)Storage temperature range, Tstg: -40 to 125℃; (10)Isolation voltage, VIsol, 2500(AC 1 minute)V; (11)Screw torque, Terminal: 3N.m; (12)Screw torque, Mounting: 3N.m.
Features
Features:(1)High input impedance; (2)Enhancement-mode; (3)The electrodes are isolated from case.
Diagrams
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 MG1000E |
Other |
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Data Sheet |
Negotiable |
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MG1001 |
Other |
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Data Sheet |
Negotiable |
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MG1001E |
Other |
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Data Sheet |
Negotiable |
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MG1002E |
Other |
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Data Sheet |
Negotiable |
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MG1004 |
Other |
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Data Sheet |
Negotiable |
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MG1004E |
Other |
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Data Sheet |
Negotiable |
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