(Hong Kong)
Product Summary
The BUW13AF is a High-voltage, high-speed, glass-passivated NPN power transistor in a SOT199 package. The applications of the device include Converters, Inverters, Switching regulators and Motor control systems.
Parametrics
BUW13AF absolute maximum ratings: (1)VCESM, collector-emitter peak voltage: 1000 V; (2)VCEO, collector-emitter voltage: 450 V; (3)ICsat, collector saturation current: 8 A; (4)IC, collector current (DC): 15 A; (5)ICM collector current (peak value): 30 A; (6)IB, base current (DC): 6 A; (7)IBM, base current (peak value): 9 A; (8)Ptot, total power dissipation: 37 W; (9)Tstg, storage temperature: -65 to +150℃; (10)Tj, junction temperature: - 150℃.
Features
BUW13AF features: (1)VCESM, collector-emitter peak voltage: 1000 V; (2)VCEO, collector-emitter voltage: 450 V; (3)VCEsat, collector-emitter saturation voltage: 1.5 V; (4)ICsat, collector saturation current: 8 A; (5)IC, collector current (DC): 15 A; (6)ICM, collector current (peak value): 30 A; (7)Ptot, total power dissipation: 37 W.
Diagrams
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 BUW13AF |
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BUW1015 |
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